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DESKRIPSI
ISO 12406:2010 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of
arsenic in silicon, and using stylus profilometry or optical interferometry for depth calibration. This method is applicable to single-crystal, poly-crystal or amorphous silicon specimens with arsenic atomic concentrations between 1 x 10 16 atoms/cm 3 and 2,5 x 10 21 atoms/cm 3 and to crater depths of 50 nm or deeper.
MATERI Training Online – ISO 12406:2010
1. Introduction ISO 12406
2. Principle ISO 12406
3. Reference Materials
4. Apparatus
5. Specimen
6. Procedures
7. Diskusi
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Topik Training | : Online Training – ISO 12406:2010 |
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